型号 IPA65R600E6
厂商 Infineon Technologies
描述 MOSFET N-CH 650V 7.3A TO220
IPA65R600E6 PDF
代理商 IPA65R600E6
产品培训模块 CoolMOS™ CP High Voltage MOSFETs Converters
标准包装 500
系列 CoolMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 650V
电流 - 连续漏极(Id) @ 25° C 7.3A
开态Rds(最大)@ Id, Vgs @ 25° C 600 毫欧 @ 2.1A,10V
Id 时的 Vgs(th)(最大) 3.5V @ 210µA
闸电荷(Qg) @ Vgs 23nC @ 10V
输入电容 (Ciss) @ Vds 440pF @ 100V
功率 - 最大 28W
安装类型 通孔
封装/外壳 TO-220-3 整包
供应商设备封装 PG-TO-220-FP
包装 管件
其它名称 SP000799140
同类型PDF
IPA65R660CFD Infineon Technologies MOSFET N-CH 650V 6.0A TO220
IPA-66-1-600-10.0-A-01-T Sensata Technologies/Airpax CIRC BRKR 10A 2POLE SCREW TERM
IPA-66-1-62F-20.0-A-01 Sensata Technologies/Airpax MAG CIRCUIT BRKR 20A M3 2POLE
IPA-66-1-62F-25.0-A-01 Sensata Technologies/Airpax CIRCUIT BREAKER 25A 2 POLE SCREW
IPA90R1K0C3 Infineon Technologies MOSFET N-CH 900V 5.7A TO220-3
IPA90R1K2C3 Infineon Technologies MOSFET N-CH 900V 5.1A 10-220FP
IPA90R340C3 Infineon Technologies MOSFET N-CH 900V 15A TO220-3
IPA90R500C3 Infineon Technologies MOSFET N-CH 900V 11A TO220-3
IPA90R800C3 Infineon Technologies MOSFET N-CH 900V 6.9A TO220-3
IPAP-111-1-62-7.50-S-01 Sensata Technologies/Airpax CIRCUIT BREAKER MAGNETTIC 7.5A
IP-ASI Altera IP VIDEO INTERFACE - ASI
IPB009N03L G Infineon Technologies MOSFET N-CH 30V 180A TO263-7
IPB009N03L G Infineon Technologies MOSFET N-CH 30V 180A TO263-7
IPB009N03L G Infineon Technologies MOSFET N-CH 30V 180A TO263-7
IPB011N04L G Infineon Technologies MOSFET N-CH 40V 180A TO263-7
IPB011N04L G Infineon Technologies MOSFET N-CH 40V 180A TO263-7
IPB011N04L G Infineon Technologies MOSFET N-CH 40V 180A TO263-7
IPB011N04N G Infineon Technologies MOSFET N-CH 40V 180A TO263-7
IPB015N04L G Infineon Technologies MOSFET N-CH 40V 120A TO263-3
IPB015N04L G Infineon Technologies MOSFET N-CH 40V 120A TO263-3